plastic medium power silicon pnp transistor . . . for amplifier and switching applications. complementary types are bd437 and bd441. ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ? ?????????? ? ???????????? collectoremitter voltage bd438 bd440 bd442 ????? ? ??? ? ????? v ceo ?????? ? ???? ? ?????? 45 60 80 ??? ? ? ? ??? vdc ???????????? ? ?????????? ? ? ?????????? ? ???????????? collectorbase voltage bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? v cbo ?????? ? ???? ? ? ???? ? ?????? 45 60 80 ??? ? ? ? ? ? ? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v ebo ?????? ?????? 5.0 ??? ??? vdc ???????????? ???????????? collector current ????? ????? i c ?????? ?????? 4.0 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 1.0 ??? ??? adc ???????????? ???????????? total device dissipation @ t c = 25 c derate above 25 c ????? ????? p d ?????? ?????? 36 288 ??? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 55 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 3.5 ??? ??? c/w on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev.10 1 publication order number: bd438/d bd438 bd440 bd442 4.0 amperes power transistors pnp silicon case 7709 to225aa type 3 2 1 style 1: pin 1. emitter 2. collector 3. base
bd438 bd440 bd442 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter breakdown voltage (i c = 100 ma, i b = 0) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? v (br)ceo ???? ? ?? ? ? ?? ? ???? 45 60 80 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectorbase breakdown voltage (i c = 100 m a, i b = 0) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? v (br)cbo ???? ? ?? ? ? ?? ? ???? 45 60 80 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase breakdown voltage (i e = 100 m a, i c = 0) ????? ? ??? ? ????? v (br)ebo ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v cb = 45 v, i e = 0) bd438 (v cb = 60 v, i e = 0) bd440 (v cb = 80 v, i e = 0) bd442 ????? ? ??? ? ? ??? ? ????? i cbo ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.1 0.1 0.1 ??? ? ? ? ? ? ? ??? madc ??????????????????? ??????????????????? emitter cutoff current (v eb = 5.0 v) ????? ????? i ebo ???? ???? e ??? ??? e ???? ???? 1.0 ??? ??? madc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 10 ma, v ce = 5.0 v) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 30 20 15 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 500 ma, v ce = 1.0 v) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 85 40 40 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 375 475 475 ??? ? ? ? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 2.0 a, v ce = 1.0 v) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 40 25 15 ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector saturation voltage (i c = 3.0 a, i b = 0.3 a) bd438 bd440 bd442 ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 0.7 0.8 0.8 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage bd438 (i c = 2.0 a, v ce = 1.0 v) bd440/442 ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.1 1.5 ??? ? ? ? ??? vdc ??????????????????? ??????????????????? currentgain e bandwidth product (v ce = 1.0 v, i c = 250 ma, f = 1.0 mhz) ????? ????? f t ???? ???? 3.0 ??? ??? e ???? ???? e ??? ??? mhz
bd438 bd440 bd442 http://onsemi.com 3 v ce , collector-emitter voltage (volts) figure 1. collector saturation region i b , base current (ma) 2.0 0 0.05 1.6 1.2 0.8 0.4 1.0 2.0 10 70 500 i c = 10 ma 100 ma 1.0 a 0.1 100 20 5.0 t j = 25 c 3.0 30 0.07 300 200 50 7.0 0.2 0.3 0.5 0.7 3.0 a figure 2. current gain 200 0 10 80 1 2 5 3 100 i c , collector current (amp) h fe , current gain (normalized) 100 60 40 20 2.0 0.005 i c , collector current (amp) 1.6 1.2 0.8 0.4 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 voltage (volts) figure 3. aono voltage 0.02 0.03 0.05 0.1 0.2 v be @ v ce = 2.0 v 0.01 0.3 0.5 1.0 2.0 3.0 4.0 figure 4. active region safe operating area 10 v ce , collector-emitter voltage (volts) 4.0 1.0 0.1 2.0 10 20 100 0.5 i c , collector current (amp) t j = 150 c dc 5 ms 1.0 5.0 50 secondary breakdown thermal limit t c = 25 c bonding wire limit curves apply below rated v ceo bd438 bd440 bd442
bd438 bd440 bd442 http://onsemi.com 4 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bd438/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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